phase control thyristor b at804 repetitive voltage up to 1600 v mean on-state current 985 a surge current 12.5 ka final specification feb 97 - issue : 04 symbol characteristic conditions tj [c] value unit blocking v rrm repetitive peak reverse voltage 125 1600 v v rsm non-repetitive peak reverse voltage 125 1700 v v drm repetitive peak off-state voltage 125 1600 v i rrm repetitive peak reverse current v=vrrm 125 50 ma i drm repetitive peak off-state current v=vdrm 125 50 ma conducting i t (av) mean on-state current 180 sin, 50 hz, th=55c, double side cooled 985 a i t (av) mean on-state current 180 sin, 50 hz, tc=85c, double side cooled 770 a i tsm surge on-state current sine wave, 10 ms 125 12.5 ka i2 t i2 t without reverse voltage 781 x1e3 a2s v t on-state voltage on-state current = 1600 a 25 1.63 v v t(to) threshold voltage 125 1.0 v r t on-state slope resistance 125 0.380 mohm switching di/dt critical rate of rise of on-state current, min. from 75% vdrm up to 1050 a, gate 10v 5ohm 125 200 a/s dv/dt critical rate of rise of off-state voltage, min. linear ramp up to 70% of vdrm 125 500 v/s td gate controlled delay time, typical vd=100v, gate source 25v, 10 ohm , tr=.5 s 25 1.1 s tq circuit commutated turn-off time, typical dv/dt = 20 v/s linear up to 75% vdrm 200 s q rr reverse recovery charge di/dt=-20 a/s, i= 700 a 125 c i rr peak reverse recovery current vr= 50 v a i h holding current, typical vd=5v, gate open circuit 25 300 ma i l latching current, typical vd=5v, tp=30s 25 700 ma gate v gt gate trigger voltage vd=5v 25 3.5 v i gt gate trigger current vd=5v 25 250 ma v gd non-trigger gate voltage, min. vd=vdrm 125 0.25 v v fgm peak gate voltage (forward) 30 v i fgm peak gate current 10 a v rgm peak gate voltage (reverse) 5 v p gm peak gate power dissipation pulse width 100 s 150 w p g average gate power dissipation 2 w mounting r th(j-h) thermal impedance, dc junction to heatsink, double side cooled 37 c/kw r th(c-h) thermal impedance case to heatsink, double side cooled 7 c/kw t j operating junction temperature -30 / 125 c f mounting force 11.8 / 13.2 kn mass 300 g ordering information : at804 s 16 standard specification vdrm&vrrm/100 via n. lorenzi 8 - i 16152 genova - italy tel. int. +39/(0)10 6556549 - (0)10 6556488 fax int. +39/(0)10 6442510 tx 270318 ansuse i - ansaldo ansaldo trasporti s.p.a. unita' semiconduttori
at804 phase control thyristor final specification feb 97 - issue : 04 dissipation characteristics square wave dc 180 120 90 60 30 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 200 400 600 800 1000 1200 1400 i f(av) [a] p f(av) [w] ansaldo dc 180 120 90 60 30 50 60 70 80 90 100 110 120 130 0 200 400 600 800 1000 1200 1400 i f(av) [a] th [c]
at804 phase control thyristor final specification feb 97 - issue : 04 dissipation characteristics sine wave 180 120 90 60 30 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 200 400 600 800 1000 1200 1400 i f(av) [a] p f(av) [w] ansaldo 180 120 90 60 30 50 60 70 80 90 100 110 120 130 0 200 400 600 800 1000 1200 1400 i f(av) [a] th [c] ansaldo
at804 phase control thyristor final specification feb 97 - issue : 04 cathode terminal type din 46244 - a 4.8 - 0.8 gate terminal type amp 60598 - 1 distributed by on-state characteristic tj = 125 c 0 500 1000 1500 2000 2500 3000 0.6 1.1 1.6 2.1 2.6 on-state voltage [v] on-state current [a] transient thermal impedance double side cooled 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 0.001 0.01 0.1 1 10 100 t[s] zth j-h [c/kw] surge characteristic tj = 125 c 0 2 4 6 8 10 12 14 1 10 100 n cycles itsm [ka] ansaldo all the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 m. in the interest of product improvement ansaldo reserves the right to change any data given in this data sheet at any time without previous notice. if not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported.
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